UPA2211T1M-T1-AT
MOSFET P-CH 12V 7.5A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation P-Channel Power MOSFET, UPA2211T1M-T1-AT, offers a 12V drain-source voltage and a continuous drain current of 7.5A at 25°C (Ta). This device features a low on-resistance of 25mOhm maximum at 7.5A, 4.5V gate-source voltage, and a gate charge of 14.9 nC maximum at 4.5V. The input capacitance (Ciss) is 1350 pF maximum at 10V. Designed for surface mounting, it is housed in an 8-VSOF package with a maximum power dissipation of 1.1W (Ta) and an operating junction temperature of 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |
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