Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

UPA2210T1M-T1-AT

Banner
productimage

UPA2210T1M-T1-AT

MOSFET P-CH 20V 7.2A 8VSOF

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation P-Channel Power MOSFET, UPA2210T1M-T1-AT, offers a 20V Drain-Source voltage with a continuous drain current of 7.2A at 25°C. This MOSFET features a low on-resistance of 29mOhm at 7.2A and 4.5V Vgs, and a gate charge of 16.3 nC at 4.5V. The device is housed in an 8-VSOF package, suitable for surface mounting. With a maximum power dissipation of 1.1W and an operating temperature up to 150°C, it is designed for demanding applications. Typical industries utilizing this component include automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SMD, Flat Lead
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.2A (Ta)
Rds On (Max) @ Id, Vgs29mOhm @ 7.2A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device Package8-VSOF
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
RJK2017DPP-M0#T2

ABU / MOSFET

product image
HAF1002-92L

P-CHANNEL POWER MOSFET

product image
RJK0389DPA-WS#J53

POWER TRANSISTOR, MOSFET