UPA1919TE-T1-AT
MOSFET P-CH 20V SC-95Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation P-channel MOSFET, UPA1919TE-T1-AT, offers a 20V drain-source voltage and a continuous drain current of 6A at 25°C ambient. This component features a low on-resistance of 58mOhm maximum at 3A, 4.5V Vgs, and a gate charge of 6nC maximum at 4V Vgs. The input capacitance (Ciss) is 680pF maximum at 10V Vds. Packaged in an SC-95-6, Mini Mold Thin surface-mount format, this device is suitable for applications requiring efficient power switching. It is commonly utilized in consumer electronics and industrial control systems where compact, high-performance discrete power devices are essential.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-95-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-95-6, Mini Mold Thin |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
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