UPA1917TE-T1-AT
MOSFET P-CH 20V SC-95Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation UPA1917TE-T1-AT is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) rating of 6A at 25°C ambient. The low on-resistance of 53 mOhm at 3A and 4.5V gate-source voltage makes it suitable for efficient power switching. Key electrical characteristics include a gate charge (Qg) of 8.1 nC at 4V and input capacitance (Ciss) of 835 pF at 10V. The UPA1917TE-T1-AT is housed in a compact SC-95-6, Mini Mold Thin package, facilitating surface mounting. This component is widely utilized in automotive and industrial control systems requiring reliable power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-95-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 3A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-95-6, Mini Mold Thin |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 835 pF @ 10 V |
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