UPA1820GR-9JG-E1-A
MOSFET N-CH 20V 12A 8TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA1820GR-9JG-E1-A is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V with a continuous drain current (Id) of 12A at 25°C. The low on-resistance (Rds On) of 8.6mOhm at 6A and 4.5V gate-source voltage (Vgs) minimizes power dissipation. With a gate charge (Qg) of 27 nC maximum at 4V Vgs and input capacitance (Ciss) of 2020 pF maximum at 10V Vds, it offers efficient switching characteristics. The UPA1820GR-9JG-E1-A is housed in an 8-TSSOP package for surface mounting, ideal for compact designs. Its threshold voltage (Vgs(th)) is 1.5V maximum at 1mA. This device finds application in power management, automotive systems, and industrial control.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 6A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 10 V |
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