UPA1818GR-9JG-E1-A
MOSFET P-CH 20V 10A 8TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's UPA1818GR-9JG-E1-A is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) capability of 10 A at 25°C. The device exhibits a low on-resistance (Rds On) of 15.2 mOhm at 5 A and 4.5 V, optimizing power transfer and minimizing heat generation. Its Gate Charge (Qg) is specified at a maximum of 20 nC at 4 V, and its Input Capacitance (Ciss) is a maximum of 2200 pF at 10 V.
This surface mount component is housed in an 8-TSSOP package, measuring 4.40mm in width. The UPA1818GR-9JG-E1-A is suitable for use in automotive, industrial, and consumer electronics sectors where reliable power management is critical. The specified threshold voltage (Vgs(th)) is a maximum of 1.5 V at 1 mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 15.2mOhm @ 5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 10 V |
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