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UPA1816GR-9JG-E1-A

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UPA1816GR-9JG-E1-A

MOSFET P-CH 12V 9A 8TSSOP

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation P-Channel MOSFET, UPA1816GR-9JG-E1-A, offers a 12V drain-source voltage and a continuous drain current of 9A (Ta). This device features a low on-resistance of 15mOhm at 4.5A drain current and 4.5V gate-source voltage. The gate charge is specified at a maximum of 15 nC at 4V, with input capacitance (Ciss) up to 1570 pF at 10V. The UPA1816GR-9JG-E1-A is housed in an 8-TSSOP package for surface mounting applications. This component is suitable for use in power management solutions across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 4.5A, 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device Package8-TSSOP
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 10 V

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