UPA1815GR-9JG-E1-A
MOSFET P-CH 20V 8-TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA1815GR-9JG-E1-A is a P-Channel MOSFET designed for power switching applications. This device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 15mOhm when Id is 3.5A and Vgs is 4.5V. Key parameters include a gate charge (Qg) of 25 nC maximum at 4V Vgs and input capacitance (Ciss) of 3000 pF maximum at 10V Vds. The UPA1815GR-9JG-E1-A is supplied in an 8-TSSOP surface mount package, delivered on tape and reel. Its specifications make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
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