UPA1814GR-9JG-E1-A
MOSFET P-CH 30V 8-TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation P-Channel Power MOSFET, UPA1814GR-9JG-E1-A, features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Ta). This device is packaged in an 8-TSSOP (0.173", 4.40mm Width) and is supplied on a Tape & Reel (TR). The MOSFET exhibits a low on-resistance (Rds On) of 16mOhm at 3.5A and 10V, with a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 2180 pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 3.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 10 V |
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