UPA1809GR-9JG-E2-A
MOSFET N-CH 30V 8A 8TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA1809GR-9JG-E2-A is an N-Channel MOSFET designed for efficient power switching. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 8A at 25°C (Ta). The On-Resistance (Rds On) is specified at a maximum of 21mOhm at 4A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 10 nC maximum at 10V and Input Capacitance (Ciss) of 520 pF maximum at 10V. The device is housed in an 8-TSSOP package suitable for surface mounting. This MOSFET is utilized in various industrial applications requiring reliable power management.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
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