UPA1809GR-9JG-E1-A
MOSFET N-CH 30V 8-TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation UPA1809GR-9JG-E1-A is a 30V N-Channel Power MOSFET designed for surface mount applications. This component features an Rds On of 21mOhm at 4A and 10V, with a continuous drain current capability of 8A at 25°C (Ta). The UPA1809GR-9JG-E1-A utilizes MOSFET technology and is housed in an 8-TSSOP package. Key electrical parameters include a gate charge (Qg) of 10 nC maximum at 10V and an input capacitance (Ciss) of 520 pF maximum at 10V. The threshold voltage (Vgs(th)) is 2.5V maximum at 1mA. This device is commonly employed in power management, consumer electronics, and industrial control applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAK
NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSON
