UPA1807GR-9JG-E1-A
MOSFET N-CH 30V 12A 8TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA1807GR-9JG-E1-A is an N-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 12A at 25°C ambient temperature. The low on-resistance, specified as 10mOhm maximum at 6A and 10V Vgs, minimizes conduction losses. With a gate charge (Qg) of 19 nC maximum at 10V Vgs and input capacitance (Ciss) of 1000 pF maximum at 10V Vds, it offers good switching performance. The UPA1807GR-9JG-E1-A is housed in an 8-TSSOP package, suitable for surface mounting. Its threshold voltage (Vgs(th)) is 2.5V maximum at 1mA. This component finds application in power management and industrial control systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 6A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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