UPA1804GR-9JG-E1-A
MOSFET N-CH 30V 8-TSSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA1804GR-9JG-E1-A is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 8 A at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 23 mOhm at 4 A and 10 V, contributing to reduced power dissipation. Key electrical parameters include Gate Charge (Qg) of 13.5 nC (Max) at 10 V and Input Capacitance (Ciss) of 761 pF (Max) at 10 V. The UPA1804GR-9JG-E1-A utilizes Metal Oxide technology and is housed in an 8-TSSOP package, suitable for surface mounting. This MOSFET is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 10 V |
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