RQK0609CQDQS#H1
MOSFET N-CH 60V 4A UPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RQK0609CQDQS-H1 is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 1.5W. The Rds On is specified at 100mOhm maximum at 2A and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 5nC maximum at 4.5V Vgs and an Input Capacitance (Ciss) of 470pF maximum at 10V Vds. The operating temperature range extends to 150°C. The device is supplied in a UPAK package, also known as TO-243AA, on tape and reel. This MOSFET is suitable for various industrial and automotive applications requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |
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