RQK0607AQDQS#H1
MOSFET N-CH 60V 2.4A UPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation N-Channel Power MOSFET, part number RQK0607AQDQS-H1, is designed for surface mount applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 2.4A at 25°C. The Rds On is specified at a maximum of 270mOhm at 1.2A and 4.5V gate-source voltage. This MOSFET offers a gate charge (Qg) of 2 nC at 4.5V and an input capacitance (Ciss) of 170 pF at 10V. The UPAK package (TO-243AA) supports a maximum power dissipation of 1.5W (Ta) and an operating junction temperature of 150°C. This component is suitable for use in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 10 V |
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