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RQJ0305EQDQS#H1

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RQJ0305EQDQS#H1

MOSFET P-CH 30V 3.4A UPAK

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation P-Channel MOSFET, RQJ0305EQDQS-H1, is designed for applications requiring efficient power switching. This device features a 30 V drain-source breakdown voltage and a continuous drain current capability of 3.4 A at 25°C ambient temperature, with a maximum power dissipation of 1.5 W. The RQJ0305EQDQS-H1 utilizes advanced MOSFET technology, offering a low on-resistance of 140 mOhm at 1.7 A and 4.5 V gate-source voltage. It operates with a gate-source voltage range of +/- 8V to +/- 12V, and a threshold voltage of 1.4 V at 1 mA. Key electrical characteristics include a maximum gate charge of 3 nC at 4.5 V and a typical input capacitance of 330 pF at 10 V. The component is packaged in a UPAK (TO-243AA) surface-mount package, supplied on tape and reel, and rated for operation up to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs140mOhm @ 1.7A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device PackageUPAK
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)+8V, -12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 10 V

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