RQA0009SXAQS#H1
MOSFET N-CH 16V 3.2A UPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RQA0009SXAQS-H1 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 16 V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.2 A at 25°C (Ta). The device offers a maximum power dissipation of 15 W (Tc) and is housed in a compact UPAK (TO-243AA) surface mount package, ideal for space-constrained designs. Key electrical characteristics include a typical input capacitance (Ciss) of 76 pF at 0 V and a gate-source threshold voltage (Vgs(th)) of 800 mV at 1 mA. Operating at temperatures up to 150°C, this MOSFET is suitable for use in automotive and industrial sectors. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 0 V |
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