RQA0004PXDQS#H1
MOSFET N-CH 16V 300MA UPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RQA0004PXDQS-H1 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 16V and a continuous drain current (Id) of 300mA at 25°C. The device offers a maximum power dissipation of 3W (Ta) and is housed in a compact UPAK (TO-243AA) surface mount package. Key electrical characteristics include a typical input capacitance (Ciss) of 10 pF at 0V and a gate-source threshold voltage (Vgs(th)) of 900mV at 1mA. It operates within an extended temperature range up to 150°C. This MOSFET is suitable for use in various industrial and consumer electronics segments requiring efficient power switching. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 0 V |
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