RJK60S7DPK-M0#T0
MOSFET N-CH 600V 30A TO3PSGManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation N-Channel Power MOSFET, RJK60S7DPK-M0-T0, offers robust performance with a 600V drain-to-source voltage and 30A continuous drain current at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 125mOhm at 15A and 10V gate-source voltage, with a gate charge (Qg) of 39 nC at 10V. The input capacitance (Ciss) is a maximum of 2300 pF at 25V. Dissipating up to 227.2W (Tc), this through-hole mounted component is housed in a TO-3PSG package. It is suitable for applications requiring high voltage and current handling, including power supplies, motor control, and lighting systems. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 227.2W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PSG |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | +30V, -20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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