RJK60S5DPP-E0#T2
MOSFET N-CH 600V 20A TO220FPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK60S5DPP-E0-T2 is an N-channel power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 20 A at 25°C, with a maximum power dissipation of 33.7 W (Tc). The device features a low on-resistance of 178 mOhm at 10A and 10V, and a gate charge (Qg) of 27 nC at 10V. Input capacitance (Ciss) is rated at 1600 pF at 25 V. The RJK60S5DPP-E0-T2 utilizes MOSFET Metal Oxide technology and is supplied in a TO-220FP package for through-hole mounting. This component is suitable for use in power supply, industrial automation, and renewable energy systems. It is supplied in a tube.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 178mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33.7W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FP |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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