RJK60S5DPK-M0#T0
MOSFET N-CH 600V 20A TO3PSGManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK60S5DPK-M0-T0 is a 600V N-Channel Power MOSFET designed for high-voltage applications. This through-hole component, housed in a TO-3PSG package, offers a continuous drain current of 20A at 25°C (Tc) with a low on-resistance of 178mOhm maximum at 10A, 10V. Key parameters include an input capacitance (Ciss) of 1600 pF at 25V and a gate charge (Qg) of 27 nC at 10V. This device is suitable for power supply units, industrial motor control, and lighting applications where robust switching performance and high voltage handling are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 178mOhm @ 10A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3PSG |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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