RJK60S5DPE-00#J3
MOSFET N-CH 600V 20A 4LDPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK60S5DPE-00-J3 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The Rds On is specified at 178mOhm maximum at 10A and 10V gate-source voltage. Input capacitance (Ciss) is 1600pF at 25V, and gate charge (Qg) is 27nC at 10V. The device utilizes Metal Oxide technology and is housed in an LDPAK (SC-83) surface mount package, suitable for industrial and power supply applications. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-83 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 178mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LDPAK |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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