RJK60S4DPP-E0#T2
MOSFET N-CH 600V 16A TO220FPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK60S4DPP-E0-T2 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C (Tc). The device offers a maximum power dissipation of 29.9W (Tc) and a low on-resistance of 290mOhm at 8A and 10V (Id, Vgs). With a gate charge (Qg) of 18 nC maximum at 10 V and input capacitance (Ciss) of 988 pF maximum at 25 V, it is suitable for power switching applications. The RJK60S4DPP-E0-T2 is housed in a TO-220FP package and supports through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, consumer electronics, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.9W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FP |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 988 pF @ 25 V |
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