RJK60S3DPP-E0#T2
MOSFET N-CH 600V 12A TO220FPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK60S3DPP-E0-T2 is a 600V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current of 12A at 25°C (Ta) and a maximum power dissipation of 27.7W (Tc). The drain-to-source breakdown voltage is 600V, with a typical Rds(On) of 440mOhm at 6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 13.6 nC (Max) at 10V and input capacitance (Ciss) of 720 pF (Max) at 25V. The MOSFET is housed in a TO-220FP package, suitable for through-hole mounting and operates at an ambient temperature up to 150°C (TJ). This device is commonly utilized in power supply units, motor drives, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.7W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FP |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V |
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