RJK6032DPH-E0#T2
MOSFET N-CH 600V 3A TO251Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK6032DPH-E0-T2 is a 600V N-Channel MOSFET designed for power switching applications. This device features a continuous drain current of 3A at 25°C (Ta) and a maximum power dissipation of 40.3W (Tc). The Rds On is specified at a maximum of 4.3 Ohms at 1.5A and 10V gate drive. Key parameters include a gate charge of 9 nC (max) at 10V and an input capacitance of 285 pF (max) at 25V. The component is housed in a TO-251 package with short leads and is supplied on tape and reel. Operating temperature range is up to 150°C (TJ). This MOSFET is suitable for use in various industries including industrial automation and power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 285 pF @ 25 V |
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