RJK6026DPP-E0#T2
MOSFET N-CH 600V 5A TO220FPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK6026DPP-E0-T2 is a 600V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current (Id) of 5A at 25°C (Ta) and a maximum power dissipation of 28.5W (Tc). The Rds On (Max) is specified at 2.4 Ohm at 2.5A, 10V. Key electrical parameters include a low gate charge (Qg) of 14 nC @ 10V and an input capacitance (Ciss) of 440 pF @ 25V. The device is housed in a TO-220FP package for through-hole mounting. It operates at junction temperatures up to 150°C. This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28.5W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FP |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
