RJK6024DPD-00#J2
N-CHANNEL POWER MOSFETManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET RJK6024DPD-00-J2. This surface mount device, packaged in TO-252-3 (DPAK), offers a drain-source voltage (Vdss) of 600 V. Key electrical characteristics include a continuous drain current (Id) of 400mA at 25°C (Ta) and a maximum power dissipation of 27.2W at 25°C (Tc). The Rds On is specified at 42 Ohms maximum for an Id of 200mA and Vgs of 10V. Input capacitance (Ciss) is 37.5 pF maximum at 25 V, with a gate charge (Qg) of 4.3 nC maximum at 10 V. Maximum gate-source voltage is ±30V. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 42Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.2W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 37.5 pF @ 25 V |
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