RJK6011DJE-00#Z0
MOSFET N-CH 600V 100MA TO92MODManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK6011DJE-00-Z0 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 100mA at 25°C ambient. The device offers a maximum on-resistance (Rds On) of 52 Ohms at 50mA and 10V gate-source voltage, with a typical gate charge (Qg) of 3.7 nC at 10V. It is housed in a TO-92MOD package with formed leads, suitable for through-hole mounting. Maximum power dissipation is rated at 900mW (Ta). This MOSFET is utilized in power supply units, lighting controls, and industrial automation where reliable high-voltage switching is critical. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 52Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-92MOD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V |
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