RJK6002DPD-WS#J2
MOSFET N-CH 600V 2A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK6002DPD-WS-J2 is a 600V N-Channel Power MOSFET designed for surface mount applications. This component features a continuous drain current capability of 2A at 25°C and a maximum power dissipation of 30W (Tc). The Rds On is specified at 6.8 Ohms maximum for an Id of 1A and Vgs of 10V, with a gate charge of 6.2 nC (max) at 10V. Input capacitance (Ciss) is 165 pF (max) at 25V. The device is housed in a TO-252-3, DPAK package, also known as MP-3A. Operating temperature ranges up to 150°C, with a maximum gate-source voltage of ±30V. This MOSFET is commonly utilized in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 25 V |
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