RJK5031DPD-00#J2
MOSFET N-CH 500V 3A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, part number RJK5031DPD-00-J2. This surface mount device features a 500V drain-source breakdown voltage and a continuous drain current of 3A at 25°C ambient. With a maximum on-resistance of 3.2 Ohms at 1.5A and 10V gate-source voltage, it offers efficient switching. The device has a maximum power dissipation of 40.3W at 25°C case temperature and an operating junction temperature of 150°C. Key parameters include a typical input capacitance of 280 pF at 25V and a ±30V gate-source voltage rating. The RJK5031DPD-00-J2 is housed in the TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as MP-3A, and is supplied on tape and reel. This component is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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