RJK5030DPD-02#J2
MOSFET N-CH 500V 5A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK5030DPD-02-J2 is an N-Channel Power MOSFET designed for robust switching applications. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) rating of 5A at 25°C ambient. With a maximum power dissipation of 41.7W (Tc), it is suitable for demanding thermal environments. The Rds On (Max) is specified at 1.6 Ohms at 2A and 10V Vgs. Key parameters include a maximum gate-source voltage of ±30V and a threshold voltage (Vgs(th)) of 4.5V at 1mA. Input capacitance (Ciss) is rated at 550 pF at 25V. The RJK5030DPD-02-J2 is offered in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as MP-3A, for surface mounting and is supplied on tape and reel. This component finds application in power supply units and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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