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RJK5030DPD-01#J2

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RJK5030DPD-01#J2

MOSFET N-CH 500V 5A MP3A

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Renesas Electronics Corporation RJK5030DPD-01-J2 is a 500V N-Channel Power MOSFET. This surface mount component, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package (MP-3A), offers a continuous drain current of 5A at 25°C with a maximum power dissipation of 41.7W (Tc). Key electrical specifications include a Drain-Source Voltage (Vdss) of 500V, a maximum Rds(on) of 1.6 Ohm at 2A, 10V, and an input capacitance (Ciss) of 550 pF at 25V. The operating temperature range extends to 150°C, and the gate-source voltage tolerance is ±30V, with a gate threshold voltage (Vgs(th)) of 4.5V at 1mA. This device is commonly utilized in power supply units, motor control circuits, and lighting applications within the industrial and automotive sectors. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)41.7W (Tc)
Vgs(th) (Max) @ Id4.5V @ 1mA
Supplier Device PackageMP-3A
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V

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