RJK5020DPK-00#T0
MOSFET N-CH 500V 40A TO3PManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, RJK5020DPK-00-T0. This device features a 500 V drain-source voltage and a continuous drain current of 40A at 25°C (Ta), with a maximum power dissipation of 200W (Tc). The Rds On is specified at 118mOhm maximum at 20A and 10V Vgs. It utilizes a TO-3P package for through-hole mounting and operates at ambient temperatures up to 150°C. Key parameters include a gate charge of 126 nC at 10V Vgs and input capacitance of 5150 pF at 25V Vds. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 118mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-3P |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 25 V |
| Qualification | - |
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