RJK5006DPD-WS#J2
MOSFET N-CH 500V 6A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, RJK5006DPD-WS-J2. This MOSFET features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. With a maximum power dissipation of 65W (Tc), it is designed for surface mount applications in the TO-252-3, DPAK package, supplied on tape and reel. Key parameters include a maximum Rds On of 1.3 Ohm at 3A, 10V, an input capacitance (Ciss) of 600pF at 25V, and a gate charge (Qg) of 20nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 4.5V at 1mA. This component is suitable for use in power supply and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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