RJK4532DPD-E0#J2
MOSFET N-CH 450V 4A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation RJK4532DPD-E0-J2 is a high-voltage N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 450V and continuous drain current capability of 4A (Ta), this component is suitable for power conversion circuits in industrial automation and renewable energy systems. The device offers a low on-resistance (Rds On) of 2.3 Ohms maximum at 2A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 40.3W (Tc). Key parameters include a gate charge (Qg) of 9 nC maximum at 10V and input capacitance (Ciss) of 280 pF maximum at 25V. The RJK4532DPD-E0-J2 is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as MP-3A, for surface mounting and is supplied on tape and reel. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
