RJK4512DPP-E0#T2
TRANSManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation, a leading manufacturer in power semiconductor solutions, presents the RJK4512DPP-E0-T2, an N-Channel Power MOSFET. This through-hole component is designed with a Drain-to-Source Voltage (Vdss) of 450V and a continuous drain current (Id) rating of 14A at 25°C. Featuring a maximum power dissipation of 30W and a low ON-resistance of 510mOhm at 7A and 10V, it offers efficient power handling. The RJK4512DPP-E0-T2 is housed in a TO-220FP package, suitable for applications requiring robust thermal performance. This MOSFET utilizes advanced Metal Oxide technology and is equipped with a gate charge (Qg) of 29 nC at 10V, making it a reliable choice for demanding power conversion and control circuits within industrial and high-voltage applications.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FP |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
| Qualification | - |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
