RJK4006DPD-WS#J2
MOSFET N-CH 400V 8A MP3AManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK4006DPD-WS-J2 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 8A at 25°C. With a maximum Rds(on) of 800mOhm at 4A and 10V Vgs, it offers efficient power handling. The device dissipates up to 65W (Tc) and operates within a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 620 pF at 25V. The RJK4006DPD-WS-J2 is available in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as MP-3A, mounted via surface mount technology. This MOSFET is suitable for use in power supply units, lighting, and automotive control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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