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RJK4002DJE-00#Z0

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RJK4002DJE-00#Z0

MOSFET N-CH 400V 3A TO92MOD

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation's RJK4002DJE-00-Z0 is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 400V drain-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C (Ta). With a maximum power dissipation of 2.54W (Tc) and a low on-resistance of 2.9Ohm at 1.5A and 10V, it is suitable for demanding power management tasks. The RJK4002DJE-00-Z0 offers a gate charge (Qg) of 6 nC at 100V and input capacitance (Ciss) of 165 pF at 25V. It operates within an expanded temperature range up to 150°C (TJ) and is supplied in a TO-92MOD package, commonly found in industrial and consumer electronics. The component is delivered on tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs2.9Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)2.54W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-92MOD
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds165 pF @ 25 V
Qualification-

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