RJK2557DPA-WS#J0
MOSFET N-CH 250V 17A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation N-Channel Power MOSFET, RJK2557DPA-WS-J0, is a surface-mount device designed for demanding applications. This component features a 250V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Ta). The Rds(on) is specified at a maximum of 128mOhm at 8.5A and 10V gate drive. With a power dissipation capability of 30W (Tc), it is suitable for high-power switching. The device has a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1250 pF at 25V. The RJK2557DPA-WS-J0 is housed in an 8-WPAK (3) package and operates within a temperature range of -55°C to 150°C. Its robust construction and electrical characteristics make it a strong candidate for use in industrial automation, power supplies, and electric vehicle systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 128mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | 8-WPAK (3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 25 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
