RJK2075DPA-00#J5A
MOSFET N-CHANNEL 200V 20A WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK2075DPA-00-J5A is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 20A at 25°C, this component offers a maximum on-resistance (Rds On) of 69mOhm at 10A and 10V drive. With a gate charge (Qg) of 38 nC and input capacitance (Ciss) of 2200 pF, it provides efficient switching characteristics. The device is housed in a compact 8-PowerVDFN package, also known as WPAK(3F) (5x6), suitable for surface mounting and delivered on tape and reel. Its 65W power dissipation capability at 25°C ambient temperature and an operating junction temperature of 150°C make it suitable for power supply units, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | WPAK(3F) (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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