RJK2017DPP-M0#T2
ABU / MOSFETManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation RJK2017DPP-M0-T2 is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 45A at 25°C (Ta). The Rds On (Max) is specified at 47mOhm at 22.5A and 10V gate drive. With a maximum power dissipation of 30W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a Gate Charge (Qg) of 66 nC at 10V and an Input Capacitance (Ciss) of 4800 pF at 25V. The device is packaged in a TO-220FL through-hole configuration, facilitating robust assembly. This MOSFET is commonly utilized in power supply, industrial automation, and automotive applications. Operating temperature range is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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