RJK1562DJE-00#Z0
MOSFET N-CH 150V 1A TO92MODManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1562DJE-00-Z0 is an N-Channel MOSFET designed for through-hole mounting in a TO-92MOD package. This component offers a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) capability of 1A at 25°C. The Rds On is specified at a maximum of 1.4 Ohms when conducting 500mA with a 4V gate-source voltage. With a maximum power dissipation of 900mW (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for applications in power management and general-purpose switching. Its input capacitance (Ciss) is a maximum of 300 pF at 25 V, and gate charge (Qg) is a maximum of 3 nC at 4 V. This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-92MOD |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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