RJK1560DPP-M0#T2
MOSFET N-CH 150V 20A TO220FLManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation RJK1560DPP-M0-T2 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 20A at 25°C (Ta). With a low on-resistance (Rds On) of 60mOhm at 10A and 4V, it minimizes conduction losses. The device offers a maximum power dissipation of 28.5W (Tc) and an operating junction temperature of 150°C (TJ). Key electrical parameters include an input capacitance (Ciss) of 6720 pF (max) at 25 V and a gate charge (Qg) of 52 nC (max) at 4 V. Packaged in a TO-220FL (TO-220-3 Full Pack) for through-hole mounting, this MOSFET is suitable for use in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 28.5W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FL |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6720 pF @ 25 V |
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