RJK1055DPB-00#J5
MOSFET N-CH 100V 23A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1055DPB-00-J5 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 23A at 25°C. With a maximum on-resistance (Rds On) of 17mOhm at 11.5A and 10V gate drive, it offers excellent conduction efficiency. The component is housed in a compact LFPAK (SC-100, SOT-669) package, suitable for surface mounting and supporting a maximum power dissipation of 60W (Tc). Key parameters include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 2550 pF at 10V. The RJK1055DPB-00-J5 is utilized in industries such as automotive, industrial power supplies, and electric vehicle charging systems. It operates across a temperature range of -55°C to 150°C (TJ) and accepts a gate-source voltage (Vgs) up to ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2550 pF @ 10 V |
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