RJK1003DPN-E0#T2
MOSFET N-CH 100V 50A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1003DPN-E0-T2 is a N-Channel Power MOSFET designed for high-performance applications. This component offers a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 50 A at 25°C (Ta). The Rds On (Max) is specified at 11 mOhm at 25 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 59 nC (Max) at 10 V and an Input Capacitance (Ciss) of 4150 pF (Max) at 10 V. With a maximum power dissipation of 125 W (Tc), this MOSFET is suitable for demanding power management solutions in industrial automation, power supplies, and automotive electronics. It features a standard TO-220AB package for through-hole mounting and operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
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