RJK1003DPN-A0#T2
MOSFET N-CH 100V 50A TO220ABAManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1003DPN-A0-T2 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This through-hole component, packaged in a TO-220ABA, offers a continuous drain current (Id) of 50A at 25°C and a maximum power dissipation of 125W. Key parameters include a low Rds On of 11mOhm at 25A and 10V, and a gate charge (Qg) of 59 nC at 10V. The input capacitance (Ciss) is 4150 pF at 10V. This device is suitable for applications in industrial and automotive sectors requiring high current handling and switching efficiency. The operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220ABA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
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