RJK1002DPN-E0#T2
MOSFET N-CH 100V 70A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's RJK1002DPN-E0-T2 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 70A at 25°C (Ta). The Rds On is specified at a maximum of 7.6mOhm at 35A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 94nC at 10V and an Input Capacitance (Ciss) of 6450pF at 10V. The device offers a maximum power dissipation of 150W (Tc) and operates at junction temperatures up to 150°C. Packaged in a TO-220AB (TO-220-3) through-hole configuration, this Renesas MOSFET is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 10 V |
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