RJK1002DPN-A0#T2
MOSFET N-CH 100V 70A TO220ABAManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1002DPN-A0-T2 is a through-hole N-Channel MOSFET featuring 100V drain-to-source voltage (Vdss). This component offers a continuous drain current (Id) of 70A at 25°C with a maximum power dissipation of 150W. The Rds On is specified at a maximum of 7.6mOhm at 35A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 94 nC and input capacitance (Ciss) of 6450 pF, both measured at 10V. Operating temperature range is up to 150°C. The device is packaged in a TO-220ABA (TO-220-3) configuration. This MOSFET is utilized in applications such as power switching and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220ABA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 10 V |
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