RJK1001DPN-E0#T2
MOSFET N-CH 100V 80A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK1001DPN-E0-T2 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 80A at 25°C (Ta). The device offers a low on-resistance of 5.5mOhm maximum at 40A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 200W (Tc).
With a high gate charge (Qg) of 147 nC at 10V and input capacitance (Ciss) of 10000 pF at 10V, this MOSFET is suitable for demanding switching applications. It operates at junction temperatures up to 150°C. The RJK1001DPN-E0-T2 is housed in a standard TO-220AB package, facilitating through-hole mounting. This component finds utility in power supply designs, motor control, and other industrial power management systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 147 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 10 V |
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