RJK0854DPB-00#J5
MOSFET N-CH 80V 25A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation RJK0854DPB-00-J5 is an 80V N-Channel Power MOSFET designed for demanding applications. This component features a low on-resistance of 13mOhm at 12.5A and 10V Vgs, facilitating efficient power transfer. With a continuous drain current capability of 25A (Ta) and a maximum power dissipation of 55W (Tc), it is suitable for high-power switching. The device utilizes Metal Oxide technology and is housed in an LFPAK package (SC-100, SOT-669) for surface mounting, offering excellent thermal performance. Key electrical characteristics include a gate charge of 27 nC at 10V and input capacitance of 2000 pF at 10V. This MOSFET is commonly employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 10 V |
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